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These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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The TO-3P type provide 1. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy 110n60c switching capability due to positive 1.
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The transistor can be used in various po 1. ON Semiconductor shall own any Modifications to the Software.
(Datasheet) 10N60C pdf – FQP10N60C/FQPF10N60C QFET FQP10N60C/FQPF10N60C 6 FQP10N60C (1-page)
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The transistor can be used in various p 1. Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t 1.
10N60C Datasheet PDF
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