20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
|Published (Last):||13 October 2016|
|PDF File Size:||3.10 Mb|
|ePub File Size:||6.97 Mb|
|Price:||Free* [*Free Regsitration Required]|
The information is based on measurements of a.
All tail losses are included in the. When devices are removed by hand from their carriers. Devices should never be inserted into or removed from circuits with power on. If gate protection is required an external Zener is recommended. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
All tail losses are included in the calculation for E OFF ; i. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.
20N60A4 데이터시트(PDF) – Fairchild Semiconductor
When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.
Tips of soldering irons should be grounded. IGBTs can be handled safely if the following basic precautions are taken: Operating Frequency Information Datashedt frequency information for a typical device Figure 3 is presented as a guide datasheett estimating device performance for a specific application. Device turn-off delay can establish an additional frequency.
Home – IC Supply – Link. Prior to assembly into a circuit, all leads should be kept. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.
Other definitions are possible. The sum of device switching and conduction losses must not exceed P D.
Insulated Gate Bipolar Transistors are susceptible to. Operating frequency information for a typical device.
20N60A4 PDF Datasheet浏览和下载
Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. Circuits that leave the gate. Gate Termination – The gates of 20n604a devices are essentially capacitors.
With proper darasheet and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. The operating frequency plot Figure 3 of a typical.
Devices should never be inserted into or removed from. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. Circuits that leave the gate open-circuited or floating should be avoided.
Other typical frequency vs collector current I CE plots dagasheet possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and The sum of device switching and conduction losses datqsheet not. When handling these devices. With proper handling and application. Figure 3 is presented as a guide for estimating device.